We present experimental results on the observation of a bulk second-ordernonlinear susceptibility derived from both free-space and integratedmeasurements in silicon nitride. Phase-matching is achieved through dispersionengineering of the waveguide cross-section, independently revealing multiplecomponents of the nonlinear susceptibility, namely X(2)yyy and X(2)xxy.Additionally, we show how the generated second-harmonic signal may be activelytuned through the application of bias voltages across silicon nitride. Thenonlinear material properties measured here are anticipated to allow for thepractical realization of new nanophotonic devices in CMOS-compatible siliconnitride waveguides, adding to their viability for telecommunication, datacommunication, and optical signal processing applications.
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